...
机译:施加外部电压的GeSb_2Te_4薄膜的机械和电学性质
Center of Micro/Nano Science & Technology, Jiangsu University, 212013 Zhenjiang, China,Province Key Laboratory of Solar Cell Science, Changzhou University, 213164 Changzhou, China,Economic Development Zone Management Committee, 224400 Funing, China;
Center of Micro/Nano Science & Technology, Jiangsu University, 212013 Zhenjiang, China;
Center of Micro/Nano Science & Technology, Jiangsu University, 212013 Zhenjiang, China,Province Key Laboratory of Solar Cell Science, Changzhou University, 213164 Changzhou, China;
Center of Micro/Nano Science & Technology, Jiangsu University, 212013 Zhenjiang, China;
Economic Development Zone Management Committee, 224400 Funing, China;
GeSb_2Te_4 film; Nanoindentation; Electric caused phase change; Mechanical and electrical properties; Phase change shrinking;
机译:通过调节施加的负偏置电压来提高氮缺陷型氮化铝钛(Ti_(0.54)Al_(0.46)N_y)薄膜的热稳定性和机械性能
机译:施加直流偏置电压对PECVD制备的氮化碳膜成分,化学键合和力学性能的影响
机译:在涂铟锡氧化物薄膜之前,将预应变施加到聚对苯二甲酸乙二醇酯基底上对薄膜质量以及光学,电学和机械性能的影响
机译:施加直流偏置电压对PECVD制备的氮化碳膜的成分,化学键合和力学性能的影响
机译:用于微机电应用的铁电薄膜的电气和机电性能。
机译:偏压对HiPIMS / RFMS共溅射Zr-Si-N薄膜力学性能的影响
机译:通过调节施加的负偏置电压来提高氮不足的氮化钛铝(Ti0.54Al0.46Ny)薄膜的热稳定性和机械性能