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机译:通过等离子体增强原子层沉积法沉积的AlN薄膜的双极电阻转换特性
Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
AlN; Resistive switching; ALD; Plasma-enhanced; ReRAM;
机译:通过热和等离子体增强原子层沉积沉积的ZnO薄膜的结构,光学,电和电阻转换特性
机译:等离子体增强原子层沉积法低温生长ZnO薄膜的双极电阻转换特性
机译:等离子体增强原子层沉积法低温生长ZnO薄膜的双极电阻转换特性
机译:通过衬底偏置控制通过等离子体增强原子层沉积法沉积的Al2O3薄膜的机械,结构和光学性质
机译:用于多功能薄膜电子设备的等离子增强原子层沉积氧化锌。
机译:等离子体增强原子层沉积在低温下沉积的HfO2薄膜的结构光学和电学性质
机译:在不同生长温度下通过等离子体增强原子层沉积沉积的AlN膜的结构特性
机译:通过等离子体增强化学气相沉积沉积的无定形碳膜作为平面化层。