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机译:氦离子诱导外延结晶退火制备铁磁GaMnAs的局部结构和磁性
Center for Nano Science and Technology, National Chiao Tung University, HsinChu 30010, Taiwan,Nuclear Science and Technology Development Center, National Tsing Hua University, HsinChu 30013, Taiwan;
Nuclear Science and Technology Development Center, National Tsing Hua University, HsinChu 30013, Taiwan;
Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, ChuTung, HsinChu 31040, Taiwan;
Department of Electrical Engineering, Chung Cheng Institute of Technology, National Defense University, 33551, Taiwan;
Institute of Materials Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan;
Department of Physics, National Tsing Hua University, HsinChu 30013, Taiwan;
Center for Nano Science and Technology, National Chiao Tung University, HsinChu 30010, Taiwan;
Diluted magnetic semiconductor; Ferromagnetism; Ion implantation; Ion beam induced epitaxial crystallization;
机译:退火对GaMnAs外延层铁磁性能,空穴浓度和电子能带结构的影响
机译:离子束诱导外延结晶后锰离子注入GaMnAs薄膜局部结构的EXAFS研究
机译:用离子束诱导外延结晶术后Mn离子注入制备的Gamnas薄膜局部结构的exafs研究
机译:铁磁有限元薄膜中退火诱导的各向异性和各向异性的研究:磁性和性能研究
机译:磁光表征观察到的铁磁GaMnAs中局部sp-d交换相互作用引起的塞曼分裂。
机译:Fe81SixB10P8-xCu1(x = 0〜8)的局部结构成核位置结晶行为及其对磁性能的影响
机译:纳米结构由铁磁Gamnas层的局部氧化决定