Air-stable n-type doping of graphene from overlying Si_3N_4 film

摘要

In this study, we report a facile method to obtain air-stable n-type graphene by plasma-enhanced chemical vapor depositing Si_3N_4 film on the surface of graphene. We have demonstrated that the overlying Si_3N_4 film can not only act as the penetration-barrier against H_2O and O_2 adsorbed on the graphene surface, but also cause an effective n-type doping due to the amine groups at the interface of graphene/Si_3N_4. Furthermore, the studies reveal that the Dirac point of graphene can be modulated by the thickness of Si_3N_4 film, which is due to competing effects of Si_3N_4-induced doping (n-type) and penetrating H_2O (O_2)-induced doping (p-type). We expect this method to be used for obtaining stable n-type graphene field-effect transistors in air, which will be widely used in graphene electronic devices.