机译:使用Ba(Mg1 / 3Ta2 / 3)O-3缓冲层改善PbZr0.52Ti0.48O3薄膜的温度依赖性和介电可调性
Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;
Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;
Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;
Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;
Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;
Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;
Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;
PZT thin films; BMT buffer layer; Temperature dependence; Dielectric tunability properties; Sol-gel method;
机译:Ba(Mg1 / 3Ta2 / 3)O-3缓冲层对Pb(Zr0.52Ti0.48)O-3薄膜疲劳行为的影响
机译:添加锂盐对Ba(Mg1 / 3Ta2 / 3)O-3陶瓷烧结温度,阳离子有序化和介电性能的影响
机译:La0.68Ba0.32MnO3导电层缓冲的应变Ba0.5Sr0.5(Ti,Mn)O-3薄膜的物理性能
机译:TiO_2缓冲层对脉冲激光沉积制备的Ba_(0.6)Sr_(0.4)Sr_(0.4)TiO_3薄膜的介电和可调性能的影响
机译:可调谐(钡,锶)钛酸盐薄膜的加工,微结构和微波介电性能
机译:具有可调谐应用的PbZr0.52Ti0.48O3 / Bi1.5Zn1.0Nb1.5O7组成层的多层薄膜
机译:Ba(Mg1 / 3Ta2 / 3)O3作为缓冲层在Si衬底上低温沉积Pb(Zr,Ti)O3薄膜