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Effect of synthesis temperature on the ordered pore structure in mesoporous silica studied by positron annihilation spectroscopy

机译:正电子ni没光谱研究合成温度对介孔二氧化硅有序孔结构的影响

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摘要

Mesoporous silica with ordered pore structure was synthesized at various temperatures using TEOS as the silica source and P123 as the template. Both small angle X-ray scattering (SAXS) and high resolution transition electron microscopy (HRTEM) measurements verify the ordered pore structure of the synthesized SiO2. With synthesis temperature increasing, the pore structure has slight damage at 130 degrees C, while it shows ordered structure again at 150 degrees C. When the synthesis temperature increases to 180 degrees C, the ordered pore structure is severely destructed. The change of pore structure is further confirmed by scanning electron microscopy (SEM) measurements. Positron lifetime measurements reveal four lifetime components in the synthesized mesoporous SiO2, and the two long lifetimes tau(3) and tau(4) correspond to the annihilation of o-Ps in the micropores and large pores of the material, respectively. The longest lifetime I-4 tends to increase slightly with increasing synthesis temperature. However, its intensity I-4 shows an overall decrease with exception at 150 degrees C. At the synthesis temperature of 180 degrees C, the intensity I-4 decreases drastically to about 17.5%. This indicates variation of the size and fraction of pores with increasing synthesis temperature, and the pore structure is seriously destructed at 180 degrees C. By comparing with the N-2 adsorption-desorption measurements, it was found that the Goworek's model is more suitable for the size estimation of cylindrical pores from the o-Ps lifetime, while Dull's and Ito's model is appropriate for the rectangular and spherical pores, respectively. (C) 2015 Elsevier B.V. All rights reserved.
机译:以TEOS为二氧化硅源,以P123为模板,在不同温度下合成了具有规则孔结构的介孔二氧化硅。小角度X射线散射(SAXS)和高分辨率过渡电子显微镜(HRTEM)测量都验证了合成SiO2的有序孔结构。随着合成温度的升高,孔结构在130摄氏度时略有损坏,而在150摄氏度时又再次显示出有序结构。当合成温度升至180摄氏度时,有序孔隙结构会严重破坏。孔结构的变化通过扫描电子显微镜(SEM)测量进一步证实。正电子寿命测量显示合成的介孔SiO2中有四个寿命成分,两个长寿命tau(3)和tau(4)分别对应于材料微孔和大孔中o-P的an灭。随着合成温度的升高,最长寿命的I-4趋于略微增加。但是,其强度I-4总体上呈下降趋势,但在150摄氏度除外。在180摄氏度的合成温度下,强度I-4急剧下降至约17.5%。这表明随着合成温度的升高,孔的尺寸和分数变化,并且在180摄氏度时孔结构严重破坏。通过与N-2吸附-脱附测量结果进行比较,发现Goworek模型更适合于根据o-Ps寿命估算圆柱孔的尺寸,而Dull和Ito模型分别适用于矩形和球形孔。 (C)2015 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Applied Surface Science》 |2016年第15期|445-450|共6页
  • 作者单位

    Wuhan Univ, Dept Phys, Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Peoples R China;

    Wuhan Univ, Dept Phys, Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Peoples R China;

    Wuhan Univ, Dept Phys, Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Peoples R China;

    Wuhan Univ, Dept Phys, Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Peoples R China;

    Wuhan Univ, Dept Phys, Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Peoples R China;

    Wuhan Univ, Dept Phys, Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ordered mesoporous silica; Synthesis temperature; Pore structure; N-2 adsorption-desorption; Positronium;

    机译:有序介孔二氧化硅合成温度孔结构N-2吸附脱附正电子;

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