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Preparation of TiO2/Ag/TiO2 (TAT) multilayer films with optical and electrical properties enhanced by using Cr-added Ag film

机译:添加Cr的Ag膜可增强光电性能的TiO2 / Ag / TiO2(TAT)多层膜的制备

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The dielectric-metal-dielectric tri-layer films have attracted much attention by virtue of their low-cost and high quality device performance as a transparent conductive electrode. Here, we report the deposition of Cr doped Ag films sandwiched between thin TiO2 layers and investigation on the surface microstructure, optical and electrical properties depending on the thickness of the Ag(Cr). The activation energy (1.18 eV) for grain growth of Ag was calculated from the Arrhenius plot using the law D-n - D-0(n) = kt, which was comparable to the bulk diffusion of Ag. This result indicated the grain growth of Ag was effectively retarded by the Cr addition, which was presumed to related with blocking the surface and grain boundary diffusion due to Cr segregation. Based on thermal stability of Cr added Ag film, we deposited TiO2/Ag(Cr)/TiO2 (TAT) multilayer thin films and with a 10 nm thick Ag(Cr), the TAT films showed high optical transmittance in the visible region (94.2%), low electrical resistivity (8.66 x 10(-5) Omega cm), and hence the high figure of merit 57.15 x 10(-3) Omega (-1) was achieved. The high transmittance of the TAT film was believed to be attributed to the low optical loss due to a reduction in the Ag layer thickness, the surface plasmon effect, and the electron scattering reduced by the Ag layer with a low electrical resistivity. (C) 2016 Elsevier B.V. All rights reserved.
机译:电介质-金属-电介质三层膜由于其作为透明导电电极的低成本和高质量的装置性能而备受关注。在这里,我们报告了夹在TiO2薄层之间的Cr掺杂Ag膜的沉积,并根据Ag(Cr)的厚度研究了表面微观结构,光学和电学性质。使用定律D-n-D-0(n)= kt,由Arrhenius曲线计算出Ag晶粒生长的活化能(1.18 eV),与Ag的整体扩散相当。该结果表明,通过添加Cr有效地抑制了Ag的晶粒生长,推测这与由于Cr偏析而阻碍了表面和晶界扩散有关。根据添加了Cr的Ag膜的热稳定性,我们沉积了TiO2 / Ag(Cr)/ TiO2(TAT)多层薄膜,并使用10 nm厚的Ag(Cr),TAT膜在可见光区显示出高透光率(94.2) %),低电阻率(8.66 x 10(-5)Omega cm),因此获得了高品质因数57.15 x 10(-3)Omega(-1)。 TAT膜的高透射率被认为归因于由于Ag层厚度的减小,表面等离子体激元效应以及具有低电阻率的Ag层所减少的电子散射而导致的低光学损失。 (C)2016 Elsevier B.V.保留所有权利。

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