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Study of residual gas adsorption on GaN nanowire arrays photocathode

机译:残留气体在GaN纳米线阵列光电阴极上的吸附研究

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摘要

In order to find out the influences of residual gas on GaN nanowire arrays photocathode, the optoelectronic properties of adsorption system are calculated on the basis of first principles. Results suggest that the residual gas adsorption will increase the work function and introduce a dipole moment with a direction from the nanowire to the adsorbates. The surface structures are changed and electrons transfer from nanowire to gas molecule. The bandgaps are enhanced after adsorption. Besides, the peak of absorption coefficients is reduced and moves to higher energy side. It is discovered that residual gas will drastically degrade the characteristics and lifetime of GaN nanowire arrays photocathode. (C) 2017 Elsevier B.V. All rights reserved.
机译:为了找出残留气体对GaN纳米线阵列光电阴极的影响,在第一原理的基础上计算了吸附系统的光电性能。结果表明,残余气体的吸附将增加功函,并沿从纳米线到被吸附物的方向引入偶极矩。表面结构发生变化,电子从纳米线转移到气体分子。吸附后带隙增强。此外,吸收系数的峰值减小并移向更高的能量侧。发现残留气体将大大降低GaN纳米线阵列光电阴极的特性和寿命。 (C)2017 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Applied Surface Science》 |2017年第may1期|623-627|共5页
  • 作者单位

    Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Dept Optoelect Technol, Nanjing 210094, Peoples R China;

    Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Dept Optoelect Technol, Nanjing 210094, Peoples R China;

    Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Dept Optoelect Technol, Nanjing 210094, Peoples R China;

    Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Dept Optoelect Technol, Nanjing 210094, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Residual gas; GaN nanowire arrays photocathode; Optoelectronic properties; First principles;

    机译:残余气体;GaN纳米线阵列光电阴极;光电性能;第一性原理;
  • 入库时间 2022-08-18 03:04:59

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