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Prospects of asymmetrically H-terminated zigzag germanene nanoribbons for spintronic application

机译:自旋电子应用中不对称氢封端的曲折锗烯纳米带的前景

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First-principles investigations have been performed to explore the spin based electronic and transport properties of asymmetrically H-terminated zigzag germanene nanoribbons (2H-H ZGeNR). Investigations reveal a significant formation energy difference (Delta E-F = EF(2H-H) - EF(H-H) similar to -0.49 eV), highlighting more energetic stability for asymmetric edge termination compared to symmetric edge termination, irrespective of the ribbon width. Further, magnetic moment analysis and total energy calculations were performed to unveil that these structures have a magnetic ground state with preferred ferromagnetic (FM) coupling. The calculated E-k structures project a unique bipolar semiconducting behaviour for 2H-H ZGeNR which is contrast to H-terminated ZGeNR. Half-metallic transformation has also been revealed via suitable p-type or n-type doping for these structures. Finally, transport calculations were performed to highlight the selective contributions of spin-down (spin-up) electrons in the I-V characteristics of the doped 2H-H ZGeNR, suggesting their vitality for spintronic device applications. (C) 2016 Published by Elsevier B.V.
机译:已经进行了第一性原理研究,以探索不对称H终止的曲折锗烯纳米带(2H-H ZGeNR)的自旋电子和输运性质。研究表明,显着的地层能量差(ΔE-F = EF(2H-H)-EF(H-H)类似于-0.49 eV),与带状对称端接相比,无论带宽度如何,非对称性端接的能量稳定性都更高。此外,进行了磁矩分析和总能量计算以揭示这些结构具有磁基态,并具有优选的铁磁(FM)耦合。计算得出的E-k结构为2H-H ZGeNR预测了独特的双极半导体行为,这与H端接的ZGeNR形成对比。通过对这些结构进行适当的p型或n型掺杂,还发现了半金属相变。最后,进行输运计算以突出自旋下降(spin-up)电子在掺杂的2H-H ZGeNR的I-V特性中的选择性贡献,表明它们对于自旋电子器件应用具有生命力。 (C)2016由Elsevier B.V.发布

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