机译:双电层栅极多层石墨烯的载流子迁移率和散射寿命
Politecn Torino, Dipartimento Sci Applicata & Tecnol, I-10129 Turin, Italy;
Politecn Torino, Dipartimento Sci Applicata & Tecnol, I-10129 Turin, Italy;
Politecn Torino, Dipartimento Sci Applicata & Tecnol, I-10129 Turin, Italy;
Politecn Torino, Dipartimento Sci Applicata & Tecnol, I-10129 Turin, Italy;
Politecn Torino, Dipartimento Sci Applicata & Tecnol, I-10129 Turin, Italy;
Ist Nazl Ric Metrol INRIM, I-10135 Turin, Italy|Nokia Technol, Cambridge CB3 0FA, England;
Ist Nazl Ric Metrol INRIM, I-10135 Turin, Italy|Nokia Technol, Cambridge CB3 0FA, England;
Politecn Torino, Dipartimento Sci Applicata & Tecnol, I-10129 Turin, Italy;
Politecn Torino, Dipartimento Sci Applicata & Tecnol, I-10129 Turin, Italy;
Few-layer graphene; EDL gating; Liquid gating; Transport properties; Scattering lifetime; Surface modification;
机译:通过抑制介电层中的载流子散射,增强了载流子迁移率的背栅多层InSe晶体管
机译:介电环境对石墨烯双层结构载流子迁移率的影响
机译:外延铁电栅氧化物上制备的高迁移率几层石墨烯场效应晶体管
机译:具有HFO_2栅极电介质的单声和双层石墨烯中载流子迁移率的厚度依赖性
机译:使用门控霍尔法提取InGaAs金属氧化物半导体结构中的载流子迁移率和界面陷阱密度。
机译:离子液体和多层石墨烯之间的双电层电容
机译:双电层栅极多层石墨烯的载流子迁移率和散射寿命