机译:相干InAs / CdSe和InAs / ZnTe / CdSe异价界面:电子和化学结构
Ioffe Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia;
Ioffe Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia;
Ioffe Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia;
Ioffe Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia;
Ioffe Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia;
Tech Univ Darmstadt, Inst Mat Sci, Otto Berndt str 3, D-64287 Darmstadt, Germany;
IOM CNR Lab TASC, Str Statale 14 Km 163-5, I-34149 Trieste, Italy;
IOM CNR Lab TASC, Str Statale 14 Km 163-5, I-34149 Trieste, Italy;
RAS, Inst Phys Microstruct, GSP-105, Nizhnii Novgorod 603950, Russia;
Ioffe Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia;
Ioffe Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia;
heterovalent interface; InAs/ZnTe; InAs/CdSe; molecular beam epitaxy; Soft x-ray photoelectron spectroscopy; energy diagrams; chemical bonds;
机译:$ {mbox {ZnTe} mathord {left / {vphantom {mbox {ZnTe} {mbox {CrTe(0 0 1)}}}}右的电子结构和能带对准。 kern-0em} {mbox {CrTe}}}(0 0 1)$,$ {mbox {CdSe} mathord {left / {vphantom {mbox {CdSe}} {mbox {CrTe(0 0 1)}}}}右。 kern-0em} {mbox {CrTe}}}(0 0 1)$和$ {mbox {CdTe} mathord {left / {vphantom {mbox {CdTe}} {mbox {CrTe(0 0 1)}}}}}右。 kern-0em} {mbox {CrTe}}}(0 0 1)$接口
机译:ZnTe / CrTe(0 0 1),CdSe / CrTe(0 0 1)和CdTe / CrTe(0 0 1)界面的电子结构和能带排列
机译:具有原子交换的ZnTe / CdSe(100)接口的电子结构
机译:CDSE / ZNSE,CDSE /(Zn,Mn)SE,INSB / GASB和INSB / INAS量子点结构和新型量子点中的自动排序
机译:CdSe / beta-Pb0.33V2O5异质结构:纳米级半导体界面具有可调节的能量结构,用于太阳能转换和存储。
机译:CDSE和CDSE(ZNS)芯(壳)芯片的均匀薄膜通过溶胶 - 凝胶组件:使光电化学特征和电子应用
机译:缺陷对Cras / Inas的电子和磁性的影响 和Cras / Cdse半金属界面