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首页> 外文期刊>Applied Surface Science >In situ one-pot fabrication of g-C3N4 nanosheets/NiS cocatalyst heterojunction with intimate interfaces for efficient visible light photocatalytic H-2 generation
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In situ one-pot fabrication of g-C3N4 nanosheets/NiS cocatalyst heterojunction with intimate interfaces for efficient visible light photocatalytic H-2 generation

机译:原位一锅法制备具有亲密界面的g-C3N4纳米片/ NiS助催化剂异质结,可有效生成可见光光催化H-2

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摘要

Constructing high-quality earth-abundant semionconductor/cocatalyst heterojunction remains a grand challenge in the promising fields of photocatalytic solar fuel H-2 production. Herein, an intimate g-C3N4 nanosheet/NiS cocatalyst heterojunction is fabricated by in situ one-step calcination of urea, thiourea and nickel acetate. Interestingly, thiourea could act as both the precursor of g-C3N4 and the sulfur source of NiS. The H-2-evolution activity of as-obtained photocatalysts was tested in a triethanolamine (TEOA) scavenger solution under visible light irradiation. Transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) mapping analysis clearly demonstrated that the NiS catalyst nanoparticles could be in situ fabricated and homogeneously distributed on the surface of g-C3N4 nanosheets without an obvious aggregation. The maximum H-2-production rate of 29.68 mu mol h(-1) could be achieved, which is nearly comparable to that of 0.5 wt% Pt loaded sample. It is believed that the intimate heterojunction interfaces between NiS nanoparticles and g-C3N4 nanosheets could be in situ constructed by high temperature calcination, which achieved the improved charge separation, the enhanced oxidation ability of TEOA and the accelerated the sluggish H-2-evolution kinetics, thus resulting in the remarkably enhanced hydrogen evolution. Therefore, our study provides insights into constructing high-quality robust g-C3N4-based heterojunction material for photocatalytic applications by using a simple one-step in-situ calcination technique. (C) 2017 Elsevier B.V. All rights reserved.
机译:在光催化太阳能H-2生产的有前途的领域中,构建高质量的富含地球的半导体/助催化剂异质结仍然是一个巨大的挑战。本文中,通过尿素,硫脲和乙酸镍的原位一步煅烧制备了紧密的g-C3N4纳米片/ NiS助催化剂异质结。有趣的是,硫脲既可以充当g-C3N4的前体,又可以充当NiS的硫源。在三乙醇胺(TEOA)清除剂溶液中,在可见光照射下测试了所得光催化剂的H-2-演化活性。透射电子显微镜(TEM)和能量色散X射线(EDX)作图分析清楚地表明,NiS催化剂纳米颗粒可以原位制备并且均匀分布在g-C3N4纳米片的表面上,而没有明显的聚集。可以达到29.68μmolh(-1)的最大H-2-生成率,这几乎与0.5 wt%的Pt负载样品可比。认为可以通过高温煅烧原位构建NiS纳米颗粒与g-C3N4纳米片之间紧密的异质结界面,从而改善了电荷分离,增强了TEOA的氧化能力并加速了缓慢的H-2-演化动力学。 ,从而显着增强了氢的释放。因此,我们的研究为通过使用简单的一步式原位煅烧技术构建用于光催化应用的高质量鲁棒性g-C3N4异质结材料提供了见识。 (C)2017 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Applied Surface Science》 |2018年第1期|208-217|共10页
  • 作者单位

    South China Agr Univ, Coll Forestry & Landscape Architecture, Key Lab Energy Plants Resource & Utilizat, Minist Agr, Guangzhou 510642, Guangdong, Peoples R China|South China Agr Univ, Coll Mat & Energy, Guangzhou 510642, Guangdong, Peoples R China;

    South China Agr Univ, Coll Forestry & Landscape Architecture, Key Lab Energy Plants Resource & Utilizat, Minist Agr, Guangzhou 510642, Guangdong, Peoples R China|South China Agr Univ, Coll Mat & Energy, Guangzhou 510642, Guangdong, Peoples R China;

    South China Agr Univ, Coll Mat & Energy, Guangzhou 510642, Guangdong, Peoples R China;

    South China Agr Univ, Coll Forestry & Landscape Architecture, Key Lab Energy Plants Resource & Utilizat, Minist Agr, Guangzhou 510642, Guangdong, Peoples R China|South China Agr Univ, Coll Mat & Energy, Guangzhou 510642, Guangdong, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Photocatalytic hydrogen evolution; In situ fabrication of NiS cocatalyst; g-C3N4 nanosheet; Intimate heterojunction interfaces; Charge carrier dynamics;

    机译:光催化放氢;NiS助催化剂的原位制备;g-C3N4纳米片;紧密的异质结界面;电荷载流子动力学;

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