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首页> 外文期刊>IEEE Transactions on Applied Superconductivity >Reactively sputtered niobium nitride thin films for Josephson integrated circuit application
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Reactively sputtered niobium nitride thin films for Josephson integrated circuit application

机译:用于约瑟夫森集成电路应用的反应溅射氮化铌薄膜

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摘要

The properties of sputter-deposited NbN thin films were studied under changes in various deposition conditions including nitrogen flow, substrate heating, the addition of carbon impurities, and the use of an Nb underlayer. Without the underlayer, a semiconductorlike resistive behavior above the superconducting transition temperature and a wide superconducting transition were observed in the niobium nitride films, including those with transition temperatures above 15 K. With the underlayer, metallic behavior and a sharp superconducting transition temperature depended strongly on nitrogen flow and substrate heating but weakly on carbon impurities. The authors present details on the preparation and analysis of niobium nitride thin films with and without a niobium underlayer as well as the measured film characteristics.
机译:在各种沉积条件的变化下研究了溅射沉积的NbN薄膜的性能,这些条件包括氮气流量,衬底加热,碳杂质的添加以及Nb底层的使用。在没有底层的情况下,在氮化铌膜中观察到了高于超导转变温度和宽的超导转变的类似半导体的电阻行为,包括转变温度高于15 K的氮化铌膜。氮气流和底物加热,但对碳杂质的影响微弱。作者详细介绍了具有和不具有铌底层的氮化铌薄膜的制备和分析以及测得的薄膜特性。

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