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首页> 外文期刊>IEEE Transactions on Applied Superconductivity >Critical current limiting factors of hot isostatically pressed (HIPed) PbMo6S8 wires
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Critical current limiting factors of hot isostatically pressed (HIPed) PbMo6S8 wires

机译:热等静压(HIPed)PbMo6S8电线的关键电流限制因素

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PbMo6S8 wires with a molybdenum barrier and a stainless steel matrix were hot isostatically pressed (HIP) at 990°C and 1225°C for 4 hours at 110 MPa. The critical current density, its distribution, as well as the ac-susceptibility were investigated. The higher the applied HIP temperature, the better the critical current density becomes. A comparison of inductive Tc transitions suggests that HIPing is able to considerably reduce the width of the transition. In addition, at 1225°C, the Tc onset is shifted from 12.4 K to 14.2 K. The high field behavior of Jc strongly depends on the effective upper critical field which is essentially determined by grain boundaries. In a degraded wire sample, a qualitative correlation between effective upper critical field and the width of the inductive transition was found. This knowledge should allow to overcome the apparent limitation of Jc at high fields (2×108 Am-2 and 3×108 Am-2 at 20 T, 4.2 K and 1.8 K, respectively).
机译:将具有钼阻隔层和不锈钢基体的PbMo6S8导线在990°C和1225°C下于110 MPa进行热等静压(HIP)4小时。研究了临界电流密度,其分布以及交流磁化率。施加的HIP温度越高,临界电流密度就越好。电感式Tc跃迁的比较表明,HIPing能够显着减小跃迁的宽度。另外,在1225°C时,Tc的起始温度从12.4 K转变为14.2K。Jc的高场行为在很大程度上取决于有效的上临界场,该场实际上由晶界决定。在退化的导线样品中,发现了有效上临界场与感应过渡宽度之间的定性相关性。该知识应可以克服Jc在高磁场下的明显局限性(分别在20 T,4.2 K和1.8 K时为2×108 Am-2和3×108 Am-2)。

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