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AFM and TEM studies on high-quality Bi-2223 thin films grown by MOCVD

机译:通过MOCVD生长的高质量Bi-2223薄膜的AFM和TEM研究

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AFM and TEM observations of high- quality Bi-2223 thin films grown by MOCVD have been carried out to elucidate the crystal growth mechanism and the effect of surface structures on superconducting properties. AFM images of the film surfaces grown on flat planes (off-angle <0.3 deg.) of LaAlO3, SrTiO3 and MgO [001] substrates clearly showed a 2-dimensional nucleation growth. In contrast, those on vicinal planes (off-angle-3 deg.) of LaAlO3, SrTiO3 and Nd:YAlO3 [001] substrates showed a step flow growth. The films grown on LaAlO3, SrTiO3 and Nd:AlO3 showed the highest Tc(0) of 97 K reported for as-grown BSCCO films. In addition, a TEM plan-view image of the film grown on [001] LaAlO3 showed clearly the misfit dislocation network running along the orthogonal [110] directions at the heterointerface and having Burger's vectors b=1/2[110]. The clear AFM images of regularly-shaped terraces or step-edges and the distinct TEM image of the misfit dislocation network are evidence of high-quality MOCVD grown Bi-2223 films.
机译:已经对通过MOCVD生长的高质量Bi-2223薄膜进行了AFM和TEM观察,以阐明晶体生长机理以及表面结构对超导性能的影响。在LaAlO3,SrTiO3和MgO [001]基板的平坦平面(斜角<0.3度)上生长的薄膜表面的AFM图像清楚地显示了二维成核生长。相反,在LaAlO3,SrTiO3和Nd:YAlO3 [001]衬底的相邻平面(偏角3度)上的衬底显示出阶跃流增长。在LaAlO3,SrTiO3和Nd:AlO3上生长的薄膜显示出BSCCO薄膜的最高Tc(0)为97K。此外,在[001] LaAlO3上生长的薄膜的TEM平面图图像清楚地显示了错配位错网络,该位错网络沿着异质界面处的正交[110]方向运行,并且具有伯格矢量b = 1/2 [110]。规则形状的台阶或台阶边缘的清晰的AFM图像和错配位错网络的清晰的TEM图像是高质量的MOCVD生长的Bi-2223薄膜的证据。

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