Gallium-doped zinc oxide films with diverse nanomorphologies grown via sol-gel united spin coating technique

摘要

Some gallium-doped zinc oxide nanofilms (GZONFs) with diverse morphologies were produced on the p-type Si (100) substrate by the sol-gel united spin coating. The thermally annealed nanofilms were characterized using different techniques to determine the influence of various Ga contents (0-5%) on their structures, morphologies, optical and electrical characteristics. The XRD patterns of the as-prepared nanofilms displayed the existence of the single-phase polycrystalline particles with varying sizes (55-36 nm). The band gap values of these GZONFs were ranged from 3.227-3.269 eV. The nanofilm produced with 1% of Ga exhibited the minimal electrical resistivity ≈ 4.6429 × 10~(-3) Ω cm, highest carrier density ≈ 1.37648 × 10~(20) cm~(-3) and Hall mobility ≈ 9.779 cm~2/V s. It was shown that the overall properties of the proposed GZONFs can be customized by adjusting the concentration of Ga doping.