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机译:通过H1孔陷阱在AL_(0.22)GA_(0.78)N / GAN / SIC HEMT中通过H1孔陷阱之间的相关性与电流DLTS的相关性:场效应增强
Micro-Optoelectronic and Nanostructures Laboratory(LMON) Faculty of Science University of Monastir Avenue of environment 5019 Monastir Tunisia;
Micro-Optoelectronic and Nanostructures Laboratory(LMON) Faculty of Science University of Monastir Avenue of environment 5019 Monastir Tunisia Higher Institute of Computer and Mathematics (ISIMM) University of Monastir Corniche Avenue BP 223 5000 Monastir Tunisia;
Micro-Optoelectronic and Nanostructures Laboratory(LMON) Faculty of Science University of Monastir Avenue of environment 5019 Monastir Tunisia;
AlGaN/GaN/SiC HEMT; Kink effect; Impact ionization; I-DLTS; Hole traps; Phonon-assisted tunneling;
机译:C-DLTS界面缺陷在AL
机译:低温调查的负捏 - 截止电压V_(捏断),AL_(0.22)GA_(0.78)N / GAN / SIC HEMT中的漏电流和界面缺陷
机译:(Ni / Au)/ Al_(0.22)Ga_(0.78)N / AlN / GaN肖特基势垒二极管中可能的电流传输机制
机译:设计双δ掺杂的AL_(0.22)GA_(0.78)AS / IN_(0.22)GA_(0.78),如假形式HEMTS
机译:二维电子气上的供体样表面陷阱以及AlGaN / GaN HEMT的电流崩塌
机译:关于GaN HEmT器件中与非单调扭结模式相关的去陷机制的研究