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Optical and structural investigations of dip-synthesized boron-doped ZnO-seeded platforms for ZnO nanostructures

机译:ZnO纳米结构的浸渍合成硼掺杂ZnO种子平台的光学和结构研究

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摘要

Zinc oxide and boron-doped zinc oxide (B-ZnO) thin films have been dip coated on glass substrates using sol-gel technique. The ZnO solution was prepared using zinc acetate dihydrate (ZAD) as the starting material. Ethanol and citric acid are used in the sol-gel process as solvent and solution stabilizer, respectively. Doping of boron is achieved by adding a proper molar ratio of boric acid (H3BO3) solution to the final ZnO solvent. The optical properties of thin films were investigated using UV-Vis spectrophotometer measurements. Transmittance of undoped ZnO films exhibits high values that are decreasing upon increasing the boron concentration. We found that the index of refraction of undoped ZnO films demonstrates values ranging between 1.6 and 2.2 and increase as B concentration is increased and approximately match those of bulk ZnO. In addition, structural properties were investigated using XRD, SEM and EDAX techniques. Upon annealing, we found that the films exhibit a hexagonal structure and as B concentration increases the grain size increases and the strain decreases. Our results indicate that (B-ZnO) films could be used as seeded platforms for growing nanostructures using hydrothermal method.
机译:氧化锌和掺硼氧化锌(B-ZnO)薄膜已使用溶胶-凝胶技术浸涂在玻璃基板上。使用醋酸锌二水合物(ZAD)作为起始原料制备ZnO溶液。在溶胶-凝胶工艺中,乙醇和柠檬酸分别用作溶剂和溶液稳定剂。通过向最终的ZnO溶剂中添加适当摩尔比的硼酸(H3BO3)溶液,可以实现硼的掺杂。使用紫外可见分光光度计测量薄膜的光学性能。未掺杂的ZnO薄膜的透射率显示出较高的值,该值随着硼浓度的增加而降低。我们发现,未掺杂的ZnO薄膜的折射率显示出介于1.6和2.2之间的值,并且随着B浓度的增加而增加,并且大致与块状ZnO的折射率匹配。此外,使用XRD,SEM和EDAX技术研究了结构性能。退火后,我们发现薄膜呈现六边形结构,并且随着B浓度的增加,晶粒尺寸增加而应变降低。我们的研究结果表明(B-ZnO)薄膜可用作水热法生长纳米结构的种子平台。

著录项

  • 来源
    《Applied Physics》 |2018年第6期|458.1-458.13|共13页
  • 作者单位

    Jordan Univ Sci & Technol Dept Phys Sci POB 3030 Irbid 22110 Jordan;

    Univ Hafr Albatin Dept Chem Engn Hafar Al Batin Saudi Arabia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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