Performance analysis of AIGaAs/GaAs/InGaAs-based asymmetric long-wavelength QWIP

摘要

In this paper, the effect of active layer doping and the In concentration (y) of InyGa1-yAs-based asymmetric QWIP are studied. A theoretical model is developed for the study by including the effect of strain due to lattice mismatch between GaAs and InGaAs stepped QW and also including the effect of doping on Hartree potential. High absorption and, hence, enhanced responsivity is obtained by incorporating Indium. However, absorption coefficient decreases with the increasing In concentration (y). However, the performance of the asymmetric QWIP is still better than its symmetric QWIP. Moreover, dark current also reduces in asymmetric QWIP as compared to symmetric QWIP.