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首页> 外文期刊>Applied Physics >Design of the high-efficiency transmission-type polarization converter based on substrate-integrated waveguide (SIW) technology
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Design of the high-efficiency transmission-type polarization converter based on substrate-integrated waveguide (SIW) technology

机译:基于衬底集成波导技术的高效传输型偏振转换器的设计

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摘要

In this paper, the design of a three-layer linear polarization converter based on substrate-integrated waveguide (SIW) technology is demonstrated. The transmission-type polarization converter with dual frequency polarization conversion characteristics is realized by a square-slot sandwiched by two layers of off-center dipole-slot resonator, and its asymmetric transmission (AT) property can be obtained by rotating the upper and the lower dipole-slot resonator to form an interlaced layout. An excellent polarization conversion ratio (PCR) can be realized by integrating the traditional transmission-type polarization converter with an SIW, and its physical mechanism can be explicated by guided wave field theory. Experimental results are presented and compared with the simulation results, and they demonstrated that ultra-high PCRs of the presented polarization converter are 0.87 and 0.99 for the measurement at the working frequency of 7.34GHz and the simulation at the working frequency of 7.6GHz, respectively. The designed polarization converter has greatly expanded the application field of SIW technology.
机译:本文介绍了一种基于衬底集成波导(SIW)技术的三层线性偏振转换器的设计。具有双频极化转换特性的传输型极化转换器是通过将两层偏心偶极缝隙谐振器夹在中间的方槽实现的,并且可以通过上下旋转来获得其不对称传输(AT)特性。偶极槽谐振器以形成隔行布局。通过将传统的传输型偏振转换器与SIW集成在一起,可以实现极好的偏振转换率(PCR),其物理机制可以通过导波场理论加以阐述。给出了实验结果并与仿真结果进行了比较,结果表明,所提出的偏振转换器的超高PCR在7.34GHz的工作频率下的仿真和在7.6GHz的工作频率下的仿真分别为0.87和0.99。 。设计的偏振转换器极大地扩展了SIW技术的应用领域。

著录项

  • 来源
    《Applied Physics》 |2019年第4期|258.1-258.7|共7页
  • 作者单位

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Natl Engn Res Ctr Electromagnet Radiat Control Ma, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Natl Engn Res Ctr Electromagnet Radiat Control Ma, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Natl Engn Res Ctr Electromagnet Radiat Control Ma, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Natl Engn Res Ctr Electromagnet Radiat Control Ma, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Natl Engn Res Ctr Electromagnet Radiat Control Ma, Chengdu 610054, Sichuan, Peoples R China;

    Nanjing Res Inst Elect Technol, Natl Key Lab Antenna & Microwave Technol, Nanjing 210013, Jiangsu, Peoples R China;

    Nanjing Res Inst Elect Technol, Natl Key Lab Antenna & Microwave Technol, Nanjing 210013, Jiangsu, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Natl Engn Res Ctr Electromagnet Radiat Control Ma, Chengdu 610054, Sichuan, Peoples R China;

    Chengdu Jia Chi Elect Technol Co Ltd, Chengdu 610041, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Natl Engn Res Ctr Electromagnet Radiat Control Ma, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Natl Engn Res Ctr Electromagnet Radiat Control Ma, Chengdu 610054, Sichuan, Peoples R China;

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  • 正文语种 eng
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