Solution-processed flexible non-volatile resistive switching device based on poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3] thiadiazol-4,8-diyl)]: polyvinylpyrrolidone composite and its conduction mechanism

摘要

Recently, solution-processed resistive switches for wearable electronics have got tremendous attention and are required for different applications due to their easy process and fabrication. Hence, this paper proposes the solution-processed resistive switching memory device based on two polymers, poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4, 8-diyl)] (F8BT) and polyvinylpyrrolidone (PVP) composite, which is fabricated on a flexible indium–tin–oxide (ITO)-coated polyethylene terephthalate (PET) substrate through spin coating technology. The fabricated device demonstrates a perfect non-volatile bipolar resistive switching through small operating voltage sweeping of ± 1.5 V, and its high-resistance state (HRS) and low-resistance state (LRS) are 92678.89 Ω and 337.85 Ω, respectively. To verify the non-volatility and long-term stability, the device is checked for more than 700 endurance cycles. During these cycles, the variations of HRS and LRS are 48 Ω and 37.35 Ω, respectively. The retention time is checked for more than 60 days, and the R ~(OFF)/ R ~(ON)ratio is 274.31. The bendability is carried out up to bending diameters  10 mm, and FESEM is used for the morphological characteristics of the device. Conduction mechanism of the proposed device is supported by space charge-limited conduction (SCLC) which is explained by the log–log I – V slope-fitting curve. The results insure that the F8BT:PVP composite-based resistive switching device is to be a potential candidate for the future flexible and low-power non-volatile resistive switching memory device.