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首页> 外文期刊>Applied Physics. A, Materials Science & Processing >Designing strategy to enhance mode selectivity of higher-output oxide-confined vertical-cavity surface-emitting lasers
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Designing strategy to enhance mode selectivity of higher-output oxide-confined vertical-cavity surface-emitting lasers

机译:增强高输出氧化物限制垂直腔面发射激光器的模式选择性的设计策略

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Performance of modern oxide-confined (OC) vertical-cavity surface-emitting diode lasers (VCSELs) is more sensitive to the construction details than in the case of other VCSELs. In particular, a stable single-fundamental-mode operation is difficult to be achieved in these VCSELs especially in higher-output large-size continuous-wave (cw) operating devices at higher temperatures. In the present paper, an operation of OC VCSELs has been investigated with the aid of the comprehensive fully self-consistent model using the (GaIn)(NAs)/GaAs quantum-well VCSEL with two oxide apertures as a typical example. A new approach is proposed to enhance cw RT single-fundamental-mode low-threshold operation in higher-output OC VCSELs. One of their oxide apertures should be shifted to the node position of the resonator standing wave where it is working as the electrical aperture only. Then diameters of both apertures may be changed independently giving an additional degree of freedom for VCSEL designing, which enables their optimisation. While the larger-diameter optical aperture placed in the anti-node position creates an efficient radial waveguiding effect, the smaller-diameter electrical aperture enhances a more uniform current injection into the VCSEL active region. Due to combining influence of both the apertures, the single-fundamental-mode operation is predicted in a large device with the 10-μm-diameter active region even for 80 K active-region temperature increase over RT of the ambient. An impact of intentional detuning at room-temperature (RT) of VCSEL active-region gain spectrum towards shorter wavelengths with respect to the resonator mode improves mode selectivity is also analysed.
机译:与其他VCSEL相比,现代氧化物限制(OC)垂直腔面发射二极管激光器(VCSEL)的性能对结构细节更为敏感。特别是,在这些VCSEL中,尤其是在较高温度下的高输出大尺寸连续波(cw)操作设备中,很难实现稳定的单基模操作。在本文中,借助具有两个氧化物孔径的(GaIn)(NAs)/ GaAs量子阱VCSEL的全面完全自洽模型,研究了OC VCSEL的操作。提出了一种新的方法来增强高输出OC VCSEL中的cw RT单基模低阈值操作。它们的氧化物孔径之一应移至谐振器驻波的节点位置,在该位置处仅用作电孔径。然后,两个孔的直径可以独立更改,从而为VCSEL设计提供了额外的自由度,从而可以优化它们。当放置在波腹位置的较大直径光学孔径可产生有效的径向波导效应时,较小直径的电孔径可增强向VCSEL有源区注入电流的均匀性。由于两个孔的综合影响,即使在有源器件的直径为10μm的大型设备中,即使在环境RT范围内温度升高了80 K,也可以预测单基模工作。还分析了VCSEL有源区域增益频谱在室温下有意失谐对谐振器模式朝较短波长的影响,从而提高了模式选择性。

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