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Vertically aligned growth of ZnO nanonails by nanoparticle-assisted pulsed-laser ablation deposition

机译:纳米粒子辅助脉冲激光烧蚀沉积法垂直排列的ZnO纳米钉生长

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摘要

Vertically aligned ZnO nanonails have been successfully grown on annealed sapphire substrates at comparatively high gas pressure using catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD). The growth behavior of the ZnO nanonails has been investigated by variation of the ablation time, which we name 'isolated particle initiated growth' and a three-step growth mechanism for ZnO nanonails is proposed. SEM analysis reveals that each of the uniquely shaped ZnO nanonails consists of a so-called hexagonal rod-shaped 'root' and a slightly tapered 'stem'. The well-aligned ZnO nanonails exhibit a strong ultraviolet (UV) emission at around 390 nm under room temperature and only negligible visible emission, which indicates that there is a very low concentration of oxygen vacancies in the highly oriented ZnO nanonails. The as-synthesized nanonail arrays on sapphire substrate could offer novel opportunities for both fundamental research and technological applications.
机译:使用无催化剂的纳米粒子辅助脉冲激光烧蚀沉积(NAPLD),在较高的气压下,垂直取向的ZnO纳米指甲已成功地在退火的蓝宝石衬底上生长。通过改变烧蚀时间研究了ZnO纳米钉的生长行为,我们将其称为“隔离粒子引发的生长”,并提出了ZnO纳米钉的三步生长机理。 SEM分析表明,每个形状独特的ZnO纳米指甲均由所谓的六边形棒状“根”和略呈锥形的“茎”组成。取向良好的ZnO纳米指甲在室温下约390 nm处表现出很强的紫外线(UV)发射,而可见光发射却微不足道,这表明高度取向的ZnO纳米指甲中的氧空位浓度非常低。蓝宝石衬底上的合成纳米钉阵列可以为基础研究和技术应用提供新的机会。

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