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首页> 外文期刊>Applied Physics. A, Materials Science & Processing >Growth and characterization of electro-deposited Cu_2O and Cu thin films by amperometric I-T method on ITO/glass substrate
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Growth and characterization of electro-deposited Cu_2O and Cu thin films by amperometric I-T method on ITO/glass substrate

机译:ITO /玻璃衬底上通过安培I-T法对电沉积Cu_2O和Cu薄膜的生长和表征

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摘要

Cuprous oxide and copper thin films were potentiostatically electro-deposited over indium-tin oxide (ITO) coated glass substrate with two different aqueous electrolytes: 0.1 M KNO_3 solution in comparison with the 0.05 M CH_3COOH/CH_3COONa (pH = 5.7) solution. Cyclic voltam-metry (CV) was used to determine the optimal deposition potentials. A single pair redox peaks were observed in the CV for 0.05 M CuSO_4 in the buffer solution, while two redox couples were observed in the KNO_3 solution. X-ray diffraction (XRD) and X-ray photo spectroscopy (XPS) revealed that in the buffer electrolyte the deposition for Cu_2O, Cu and co-deposition alloy were formed at more negative potentials than in the KNO_3. Furthermore, periodic structure can be obtained by controlling the deposition potentials in KNO_3 with CuSO_4 solution. The structural and morphological properties of the films have been investigated by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM).
机译:将氧化亚铜和铜薄膜恒电位电沉积在具有两种不同水性电解质的氧化铟锡(ITO)涂层玻璃基板上:0.1 M KNO_3溶液与0.05 M CH_3COOH / CH_3COONa(pH = 5.7)溶液相比。循环伏安法(CV)用于确定最佳沉积电位。在缓冲溶液中0.05 M CuSO_4的CV中观察到一对氧化还原峰,而在KNO_3溶液中观察到两个氧化还原对。 X射线衍射(XRD)和X射线光谱(XPS)显示,在缓冲电解液中,Cu_2O,Cu和共沉积合金的沉积物形成的负电位比KNO_3中的负电位高。此外,可以通过用CuSO_4溶液控制KNO_3中的沉积电位来获得周期性结构。已经通过扫描电子显微镜(SEM)和原子力显微镜(AFM)研究了膜的结构和形态特性。

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