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Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition

机译:纳米粒子辅助脉冲激光沉积法无催化剂合成垂直排列的ZnO纳米线

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摘要

Vertically aligned ZnO nanowires have been successfully synthesized on c-cut sapphire substrates by a catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD) in Ar and N_2 background gases. In NAPLD, the nanoparticles formed in the background gas by laser ablation are used for the growth of the nanowires. The surface density of the nanowires can be controlled by varying the density of nanoparticles, which is in turn achieved by varying ablation laser parameters such as the energy and the repetition rate. When single ZnO nanowire synthesized in a N_2 background gas was excited by 355 nm laser-pulse with a pulse-width of 8 ns, stimulated emission was clearly observed, indicating high quality of the nanowire.
机译:通过无催化剂的纳米粒子辅助脉冲激光烧蚀沉积(NAPLD)在Ar和N_2背景气体中成功地在c形切割蓝宝石衬底上成功合成了垂直排列的ZnO纳米线。在NAPLD中,通过激光烧蚀在背景气体中形成的纳米颗粒用于纳米线的生长。可以通过改变纳米颗粒的密度来控制纳米线的表面密度,这又可以通过改变诸如能量和重复率的消融激光参数来实现。当在N_2背景气体中合成的单个ZnO纳米线被脉冲宽度为8 ns的355 nm激光脉冲激发时,可以清楚地观察到受激发射,表明纳米线的质量很高。

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