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机译:铁电/ AlGaN / GaN异质结构中铁电极化控制的二维电子气
National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;
National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;
National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;
National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;
National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;
State Key Lab of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China;
Ⅲ-Ⅴ semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; metal-insulator-semiconductor structures (including semiconductor-to-insulator); other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77);
机译:铁电栅极用于控制二维电子气在AlGaN / GaN异质结构中的传输特性
机译:二维电子气体在BATIO3 / MgO / AlGaN / GaN / Si异质结构中具有二维电子气体的强界面耦合效应
机译:铁电极化定时铁电/ GaN异质结构的二维电子气
机译:AlGaN / GaN异质结构上具有双栅结构的铁电场效应晶体管
机译:高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
机译:具有极化P(VDF-TrFE)铁电聚合物门控的AlGaN / GaN金属氧化物半导体高电子迁移率晶体管
机译:铁电/ GaN异质结构的二维电子气特性