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机译:具有和不具有AlON中间层的基于HfTa的栅介电Ge金属氧化物半导体电容器的比较研究
Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China;
rnDepartment of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China;
rnDepartment of Electrical & Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong;
rnDepartment of Electrical & Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong;
rnDepartment of Electrical & Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong;
机译:带有和不带有AlON中间层的HfTa基栅介电Ge金属氧化物半导体电容器的比较研究
机译:以AlON为中间层的HfTiON栅介电GaAs金属氧化物半导体电容器的电学性能
机译:通过Tao_xn_y中间层改善具有Hfta基栅介电层的Ge金属氧化物半导体电容器的电性能
机译:n-InAs金属氧化物半导体电容器的La_2O_3 / HfO_2栅介质的研究
机译:使用和不使用重组人血小板衍生生长因子的无细胞真皮基质覆盖牙根缺损的比较研究
机译:用于金属氧化物半导体电容器和场效应晶体管的氢化金刚石上高k氧化物概述
机译:具有和不具有alON中间层的基于HfTa的栅极 - 电介质Ge金属 - 氧化物 - 半导体电容器的比较研究