机译:沉积温度和环境对直流溅射n-ZnO / p-Si异质结物理和电性能的影响
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, 200433, China;
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, 200433, China;
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, 200433, China;
Department of Solid State Science, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium;
Department of Solid State Science, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium;
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, 200433, China;
Ⅱ-Ⅵ semiconductors; Ⅱ-Ⅵ semiconductors; other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions;
机译:沉积温度和环境对直流溅射n-ZnO / p-Si异质结物理和电性能的影响
机译:环境温度对纳米结构n-ZnO / p-Si异质结二极管电性能的影响
机译:用化学浴沉积法生长的N-ZnO纳米线/ P-Si和N- ZnO纳米线/对ZnO血管杂交型对比较光伏性能的研究
机译:对N-ZnO / P-Si异质结二极管电和光学性能的退火效应
机译:具有和不具有界面层的n-ZnO / p-Si单异质结太阳能电池的开发。
机译:高温N- ZnO纳米棒/ P-退化金刚石异质结的负差分电阻
机译:沉积温度对N-ZnO / P-Si异质结的物理性能的影响