Investigation of blue InGaN light-emitting diodes with step-like quantum well

摘要

The concept of a step-like quantum well is proposed with the purpose to reduce the influence of electrostatic field resulting from the piezoelectric effect on the optical performance of blue InGaN light-emitting diodes. Particularly, the optical properties of the LED structures with the In_(0.23)Ga_(0.77)N single quantum well, In_(0.20)Ga_(0.80)N/In_(0.26)Ga_(0.74)N step-like quantum well, and In_(0.26)Ga_(0.74)N/In_(0.20)Ga_(0.80)N step-like quantum well are numerically investigated in detail. Simulation results show that the In_(0.20)Ga_(0.80)N/In_(0.26)Ga_(0.74)N step-like-quantum-well LED structure has the best optical performance in virtue of the improvement in spatial overlap of electrons and holes in the quantum well.