Super-resolution readout property of bismuth-doped antimony-based thin film as a functional mask for read-only memory

摘要

Bismuth-doped antimony-based (Sb_(100)-xBi_x, x = 2.46) thin films were presented as a functional mask for super-resolution readout of read-only memory (ROM). The pit size of the ROM was 390 nm, and super-resolution readout was realized on a dynamic tester with laser wavelength of 780 nm and the numerical aperture of the focusing objective lens of 0.45. The carrier-to-noise ratio (CNR) of 22 dB, readout threshold power of 0.8 mW and super-resolution readout cycles of 2 × 10~4 was achieved. The influence of film thickness and readout power on CNR was investigated. The reflectivity and transmittance of the film with different temperature at wavelength of 780 nm were detected, and the super-resolution mechanism of the bismuth-doped antimony-based thin films as the functional mask layer was discussed.