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Synthesis and functional properties of nickel-manganese-gallium ferromagnetic shape memory thin films.

机译:镍锰镓铁磁形状记忆薄膜的合成及功能性能。

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摘要

The purpose of this work was to develop a growth pathway for synthesis of high-quality ferromagnetic Ni-Mn-Ga shape memory thin films and to understand their functional properties.;These Ni-Mn-Ga films were synthesized in a previously unexplored high temperature deposition regime. The temperatures employed encouraged the development of the desired micrometer-size highly twinned martensite grain structure while the general problem of preferential evaporation of the volatile elements at elevated temperatures was solved by using a manganese and gallium enriched target.;The films grown on (100) YSZ exhibit a self-reversible, magnetically induced reorientation of the martensite variants (MIR), which is temperature dependent. The mechanism associated with the self-activated reversibility in the MIR effect was established through a detailed characterization of the texture, microstructure, and magnetic domain structure of the films.;The synthesized films also show a large magnetocaloric effect (MCE), which is particularly strong at low magnetic fields. The effect is associated with an overlapped ferromagnetic and martensitic phase transition. Detailed characterization of these transitions allow for an understanding of the role each phase transition plays in determining the level of enhancement to a standard MCE governed only by the ferromagnetic phase transition.;Two groups of Ni-Mn-Ga films were prepared using the pulsed laser deposition technique. One group was grown on (100) YSZ ((Zr,Y)O2 with ZrO 2:Y2O2=92:8) and was used to study the thermal, magnetic, and magnetocaloric properties. The other group was deposited on (100) MgO. These films were fabricated into free-standing micro-bridges.;Ni-Mn-Ga free-standing micro-bridges were fabricated using photolithography followed by wet chemical etching. Microstructural evolution of the martensitic variants resulting from changes to the stress field in the detached areas was studied in the context of potential film applications for micro-actuators.
机译:这项工作的目的是为合成高质量的铁磁Ni-Mn-Ga形状记忆薄膜开发一条生长途径并了解其功能特性。这些Ni-Mn-Ga薄膜是在以前未开发的高温下合成的沉积制度。所采用的温度促进了所需的微米级高孪晶马氏体晶粒结构的发展,同时通过使用富含锰和镓的靶材解决了挥发性元素在高温下优先蒸发的普遍问题。(100) YSZ表现出马氏体变体(MIR)的自可逆的,磁感应的重新取向,这与温度有关。通过详细表征薄膜的织构,微观结构和磁畴结构,建立了与MIR效应中的自激活可逆性相关的机制。合成的薄膜还显示出大的磁热效应(MCE),特别是在低磁场下很强。该影响与铁磁和马氏体相变的重叠有关。对这些跃迁的详细描述有助于理解每个相变在确定仅由铁磁相变控制的标准MCE增强水平中的作用。;使用脉冲激光制备了两组Ni-Mn-Ga膜沉积技术。一组在(100)YSZ((Zr,Y)O2上,ZrO 2:Y2O2 = 92:8)上生长,用于研究热,磁和磁热性质。另一组沉积在(100)MgO上。这些膜被制成独立的微桥。Ni-Mn-Ga自支撑的微桥是通过光刻法和湿法化学蚀刻法制成的。在微致动器的潜在薄膜应用中,研究了由分离区应力场变化引起的马氏体变种的微观结构演变。

著录项

  • 作者

    Zhang, Yuepeng.;

  • 作者单位

    McMaster University (Canada).;

  • 授予单位 McMaster University (Canada).;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2010
  • 页码 165 p.
  • 总页数 165
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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