Interaction of terahertz radiation with surface and interface plasmon-phonons in AlGaAs/GaAs and GaN/Al_2O_3 heterostructures

摘要

Surface phonon and plasmon-phonon polari-ton characteristics of GaAs, Al_xGa_(1-x)As/GaAs, and GaN/ Al_2O_3 layered structures are investigated by means of terahertz radiation reflection spectroscopy. The strong resonant absorption peaks and selective emission of the THz radiation dependent upon the lattice composition and free electron density in these layered structures are experimentally observed and analyzed.