Photothermal deflection investigation of bulk Si and GaSb transport properties

摘要

Abstract The photo-thermal deflection technique (PTD) is used to study the transport properties such as non-radiative lifetime of minority carriers (τ_(nr)), electronic diffusivity (D) and surface recombination velocity (S) in bulk silicon (Si) and gallium antimonide (GaSb) semiconductors. A generalized one-dimensional theoretical model has been also developed, and the coincidence between experimental curves giving the normalized amplitude and phase variations versus square root modulation frequency and the corresponding theoretical curves makes possible to deduce the electronic parameters cited above.