首页> 外文期刊>Applied Physics >Study of the optically diffused reflectance and thermal-microstructure for the phase transformation of AgNO_3
【24h】

Study of the optically diffused reflectance and thermal-microstructure for the phase transformation of AgNO_3

机译:AgNO_3相变的光散射反射率和热微结构研究

获取原文
获取原文并翻译 | 示例
       

摘要

Optical, microstructural, and thermal properties of the investigated silver nitrate samples were characterized by various techniques, such as X-ray analysis, scanning electron microscopy, UV-Vis-NIR absorption and differential scanning calorimetry (DSC). The presence of structural phase transition [orthorhombic structure (phase Ⅱ) to rhombohedral structure (phase Ⅰ)] was checked by DSC and X-ray analysis measurements. The thermal energy required for such transformation is found to be 11.6 J/g. The optical band gaps of AgNO_3 are 1.4 and 2.02 eV for phase Ⅱ and phase Ⅰ, respectively, at the low-energy region. But at high-energy region, the optical band gaps are 3.41 and 3.43 eV for phase Ⅱ and phase Ⅰ, respectively. Characteristic peaks for AgNO_3 corresponding to (2 1 1), (0 0 4) and (3 5 1) for phase Ⅱ and (0 0 4), (3 1 1) and (0 2 4) for phase Ⅰ have been observed. The average crystalline size for AgNO_3 samples and the values of dislocation density δ and the strain ε for the planes of two phases Ⅱ and Ⅰ are calculated and also the texture coefficient is determined. Such information can considerably aid in understanding the process of phase transformations in AgNO_3.
机译:通过各种技术,如X射线分析,扫描电子显微镜,UV-Vis-NIR吸收和差示扫描量热法(DSC),对所研究的硝酸银样品的光学,微观结构和热性能进行了表征。通过DSC和X射线分析测量来检查结构相变的存在[斜方晶结构(Ⅱ相)到菱面体结构(Ⅰ相)]。发现这种转变所需的热能为11.6J / g。在低能区,Ⅱ相和Ⅰ相的AgNO_3的光学带隙分别为1.4和2.02 eV。但是在高能区,Ⅱ相和Ⅰ相的光学带隙分别为3.41和3.43 eV。观察到AgNO_3对应于Ⅱ相的(2 1 1),(0 0 4)和(3 5 1)和Ⅰ相对应的(0 0 4),(3 1 1)和(0 2 4)的特征峰。 。计算了AgNO_3样品的平均晶体尺寸,计算了两相Ⅱ和相Ⅰ平面的位错密度δ和应变ε,并确定了织构系数。这些信息可以极大地帮助您了解AgNO_3中的相变过程。

著录项

  • 来源
    《Applied Physics》 |2014年第3期|1445-1453|共9页
  • 作者

    M. Hafez; I. S. Yahia; S. Taha;

  • 作者单位

    Physics Department, Faculty of Science, Cairo University, Cairo, Egypt;

    Nano-Science and Semiconductor Labs., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt, Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia, Center of Excellent for Advanced Materials Research, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia;

    Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia, Center of Excellent for Advanced Materials Research, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia, Physics Department, Faculty of Science, El-Fayoum University, El-Fayoum, Egypt;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:06:36

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号