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Influence of argon pressure and current density on substrate temperature during magnetron sputtering of hot titanium target

机译:热钛靶磁控溅射过程中氩气压力和电流密度对衬底温度的影响

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摘要

The paper describes physical characteristics of the hot target sputtering process, which have not been known before. To switch a magnetron over to the hot target regime, a titanium disk of 1 mm thick with a 1-mm-gap was attached on a 4-mm-thick copper plate cooled by running water. A thermocouple sensor was used to investigate the thermal processes occurring in substrates. The study was performed at the discharge current density of 20-40 mA/cm~2 and argon pressure of 3-7 mTorr. The accuracy of temperature measurement appeared to be within ±5%, due the application of a chromel-copel thermocouple. The study reveals that under these conditions the heating curves have the inflection points positioned proportionally to the discharge current density and argon pressure on a time axis. The inflection point appears in the kinetic curves due to the finite value of the target heating time constant. The study shows that the substrate fixed temperature and substrate heating time constant depend on the argon pressure and relate to the current density by the polynomials of the first and second degrees, respectively. The influence of a target on the substrate heating kinetics is considered in an analytical description by the introduction of a multiplier in the form of an exponential function of time. The results of the research make a novel contribution to the field of the sputtering process.
机译:该论文描述了热靶溅射工艺的物理特性,这在以前是未知的。为了将磁控管切换到较热的目标状态,将1mm厚,间隙为1mm的钛圆片安装在4mm厚的铜板上,该铜板由流水冷却。使用热电偶传感器来研究基板中发生的热过程。研究是在20-40 mA / cm〜2的放电电流密度和3-7 mTorr的氩气压力下进行的。由于使用了铬-Copel热电偶,温度测量的精度似乎在±5%之内。研究表明,在这些条件下,加热曲线的拐点在时间轴上与放电电流密度和氩气压力成比例。由于目标加热时间常数的有限值,拐点出现在动力学曲线中。研究表明,衬底固定温度和衬底加热时间常数取决于氩气压力,并且分别通过一阶和二阶多项式与电流密度有关。在分析描述中,通过引入时间指数函数形式的乘数,可以考虑目标对衬底加热动力学的影响。研究结果为溅射工艺领域做出了新的贡献。

著录项

  • 来源
    《Applied Physics 》 |2018年第1期| 124:48.1-124:48.5| 共5页
  • 作者单位

    Lappeenranta University of Technology, Skinnarilankatu 34, 53850 Lappeenranta, Finland;

    Department of Physical Electronics and Technology, St. Petersburg Electrotechnical University, 5 Prof. Popov St., St. Petersburg 197376, Russia;

    Department of Physical Electronics and Technology, St. Petersburg Electrotechnical University, 5 Prof. Popov St., St. Petersburg 197376, Russia;

    Department of Physical Electronics and Technology, St. Petersburg Electrotechnical University, 5 Prof. Popov St., St. Petersburg 197376, Russia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Magnetron sputtering; Titanium; Hot target; Substrate heating;

    机译:磁控溅射;钛;热门目标;基板加热;

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