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Cathodoluminescence during epitaxy in Rb-ion irradiated α-quartz

机译:Rb离子辐照的α-石英外延过程中的阴极发光

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摘要

Implanting photoactive ions into quartz or silica is a simple and efficient way to tune the luminescence light used for various optoelectronic applications. However, such ion implantation damages or even destroys the crystalline order in quartz. We report here on cathodoluminescence of α-quartz after 175 keV Rb-ion implantation and epitaxial growth when annealing the samples in air or ~(18)O_2. In the cathodoluminescence spectra taken at room temperature, five bands were identified. In addition to three intrinsic bands at 2.40, 2.79, and 4.30 eV, which are related to the quartz and/or silica matrix, two strong violet sub-bands at 3.25 and 3.65 eV were observed, which appear to be strongly correlated with the presence of alkali ions and/or the degree of epitaxy of the matrix. Their properties and origin are discussed in relation to similar bands observed after Ba, Ge, and Na ion implantation.
机译:将光敏离子注入到石英或二氧化硅中是一种用于调节用于各种光电应用的发光光的简单而有效的方法。但是,这种离子注入会破坏甚至破坏石英中的晶体顺序。我们在这里报告了在175 keV Rb离子注入和在空气或〜(18)O_2中退火样品后外延生长后α-石英的阴极发光。在室温下获得的阴极发光光谱中,鉴定出五个带。除了在2.40、2.79和4.30 eV处的三个固有带(与石英和/或二氧化硅基质相关)外,还观察到在3.25和3.65 eV处的两个强紫色子带,这似乎与存在的强相关碱离子的浓度和/或基质的外延程度。讨论了其与Ba,Ge和Na离子注入后观察到的相似谱带有关的特性和起源。

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