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High power single-sided Bragg reflection waveguide lasers with dual-lobed far field

机译:具有双瓣远场的高功率单面布拉格反射波导激光器

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摘要

We report on 980-nm InGaAs/GaAs lasers with dual-lobed far field based on a single-sided Bragg reflection waveguide (BRW). The high slope efficiency ~0.92 W/A and a continuous wave (CW) output power > 1.5 W (3.2 W pulsed) have been obtained. The threshold current density is as low as 253 A/cm~2 for a 1.5-mm-long device and the transparency current density is only 140 A/cm~2. The further analysis shows the intrinsic reason for the single-lobed or the dual-lobed far-field distribution is determined by the mode shape in the cavity, not the single-sided or dual-sided BRW structure. The condition to achieve a narrow single-lobed far-field distribution is discussed.
机译:我们报告了基于单面布拉格反射波导(BRW)的具有双瓣远场的980 nm InGaAs / GaAs激光器。获得了约0.92 W / A的高斜率效率和大于1.5 W(3.2 W脉冲)的连续波(CW)输出功率。对于1.5mm长的器件,阈值电流密度低至253 A / cm〜2,透明电流密度仅为140 A / cm〜2。进一步的分析表明,单瓣或双瓣远场分布的内在原因是由腔中的振型决定的,而不是由单面或双面BRW结构决定的。讨论了实现窄单瓣远场分布的条件。

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  • 来源
    《Applied physics》 |2012年第3期|p.809-812|共4页
  • 作者单位

    Key laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China,Graduate School of the Chinese Academy of Sciences, Beijing 100049, China;

    Key laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;

    Key laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;

    Key laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;

    Key laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;

    Key laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;

    School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Republic of Singapore;

    School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Republic of Singapore;

    School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Republic of Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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