Optically Pumped Epitaxial GaAs Waveguide Lasers with Distributed Bragg Reflectors.

摘要

Fabrication and characteristics of epitaxial waveguide lasers with distributed Bragg reflectors are described. GaAs-(GaA1)As double-layered structures were grown by conventional liquid-phase-epitaxy technique. Periodic corrugations were made by chemical etching through a photoresist grating mask. Laser action with clearly defined longitudinal modes was observed under optical pumping at liquid-nitrogen temperature. (Author)