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首页> 外文期刊>Applied physics >Tunability of UV electroluminescence for n-ZnO:Al~--ZnO/i-MgO-GaN heterostructured light-emitting diodes
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Tunability of UV electroluminescence for n-ZnO:Al~--ZnO/i-MgO-GaN heterostructured light-emitting diodes

机译：n-ZnO：Al / n〜--ZnO / i-MgO / n-GaN异质结构发光二极管的紫外电致发光可调性

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摘要

n-ZnO:Al -ZnO/i-MgO-GaN heterostructured diodes have been fabricated by radio frequency magnetron sputtering. The electroluminescence (EL) of the n-ZnO:Al~--ZnO/i-MgO-GaN diodes has been investigated. All EL spectra are dominated by ultraviolet (UV) emission peaked at around 368 nm. However, EL performances of the devices can be tuned through controlling the electrical parameters of ZnO:Al films. With the variation of the ZnO:Al films, EL spectra could evolve into random las-ing action from conventional EL. The electrical parameters of the corresponding ZnO: Al films were researched, and the related UV emission mechanism is discussed in terms of the energy-band theory of the heterojunctions.
机译：已经通过射频磁控溅射制备了n-ZnO：Al / n-ZnO / i-MgO / n-GaN异质结构二极管。研究了n-ZnO：Al / n〜--ZnO / i-MgO / n-GaN二极管的电致发光（EL）。所有的EL光谱都以在368 nm附近达到峰值的紫外线（UV）发射为主。但是，可以通过控制ZnO：Al膜的电参数来调整器件的EL性能。随着ZnO：Al薄膜的变化，EL光谱可能会从常规EL演变为随机的激光作用。研究了相应的ZnO：Al薄膜的电学参数，并根据异质结的能带理论，探讨了相关的紫外线发射机理。

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  • 来源
    《Applied physics》 |2012年第2期|p.497-502|共6页
  • 作者

    S. Li; G. Fang; H. Huang; H. Long; H. Wang; X. Mo; B. Dong; X. Zhao;

  • 作者单位

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, P.R. China,School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei 430073, P.R. China;

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, P.R. China;

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, P.R. China;

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, P.R. China;

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, P.R. China;

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, P.R. China;

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, P.R. China;

    Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, P.R. China;

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