Low frequency noise in InSb/GaAs and InSb/Si channels

摘要

The low frequency noise features of InSb grown on GaAs and Si substrates using molecular-beam epitaxy are investigated in the temperature range from 80 to 300 K. In all samples the flicker noise dominates the spectra, with Hooge factors as low as 2×10-5 and 9×10-5 for InSb on GaAs and Si, respectively. The temperature dependence of the Hooge factors is investigated.