High power terahertz emission from a single gate AlGaN/GaN field effect transistor with periodic Ohmic contacts for plasmon coupling

摘要

We report on room temperature terahertz (THz) emission by a single, short gate AlGaN/GaN field effect transistor with grating Ohmic contacts. The fingers of metal contacts are fabricated at the nanoscale in length and spacing in order to work as a radiation coupler of electron plasmons in the THz range. Spectrum analysis revealed a broadband emission centered at 1.5 THz with a controlled polarization by the grating contacts. The measured output power is linearly increased with the drain input power and reached up to 1.8 μW.