ZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetector

摘要

We demonstrated a simple and low-cost fabrication of ZnO p-n homojunction. The junction consists of n-type ZnO nanowires array by a hydrothermal method covered with p-type Al, N co-doped ZnO film by a sol-gel method. The junction exhibits good rectification characteristics, with reverse leakage current and rectification ratio of ∼5 μA and ∼150 at bias of 3 V, respectively. The junction is operated as a photodetector when light radiation is shined on the glass-side of the device. The photodetector shows a peak responsivity at 384 nm with UV-visible responsivity ratio (R384 nm/R550 nm) of ∼70 at an operating bias of -3 V.