B diffusion in implanted Ni2Si and NiSi layers

摘要

B diffusion in implanted Ni2Si and NiSi layers has been studied using secondary ion mass spectrometry, and compared to B redistribution profiles obtained after the reaction of a Ni layer on a B-implanted Si(001) substrate, in same annealing conditions (400–550 °C). B diffusion appears faster in Ni2Si than in NiSi. The B solubility limit is larger than 1021 atom cm-3 in Ni2Si, while it is ∼3×1019 atom cm-3 in NiSi. The solubility limit found in NiSi is in agreement with the plateau observed in B profiles measured in NiSi after the reaction of Ni on B-implanted Si.