Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes

摘要

InGaN-based vertical structure light emitting diodes (VLEDs) with multi-layer graphene transparent electrodes with higher optical output have been fabricated and tested. High temperature annealing introduced inter-diffusion of metal atoms and Ga atoms and generated the partially sandwiched graphene structure, which contributed to the performance improvement of VLEDs.