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首页> 外文期刊>Applied Physics Letters >Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes
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Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes

机译：部分夹层石墨烯作为基于InGaN的垂直发光二极管的透明导电层

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摘要

InGaN-based vertical structure light emitting diodes (VLEDs) with multi-layer graphene transparent electrodes with higher optical output have been fabricated and tested. High temperature annealing introduced inter-diffusion of metal atoms and Ga atoms and generated the partially sandwiched graphene structure, which contributed to the performance improvement of VLEDs.
机译：已经制造并测试了具有更高光输出的具有多层石墨烯透明电极的基于InGaN的垂直结构发光二极管（VLED）。高温退火引入了金属原子和Ga原子的相互扩散，并生成了部分夹在中间的石墨烯结构，这有助于提高VLED的性能。

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  • 来源
    《Applied Physics Letters》 |2012年第6期|p.061102.1-061102.4|共4页
  • 作者

    Liancheng Wang; Yiyun Zhang; Xiap Li; Zhiqiang Liu; Enqing Guo; Xiaoyan Yi; Junxi Wang; Hongwei Zhu; Guohong Wang;

  • 作者单位

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Department of Mechanical Engineering, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Tsinghua University, Beijing 100084, China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Department of Mechanical Engineering, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Tsinghua University, Beijing 100084, China, Center for Nano and Micro Mechanics (CNMM), Tsinghua University, Beijing 100084, China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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