Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

摘要

We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520?nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1±0.3)×10-29 face='roman'>cm6 face='roman'>s-1 at 450?nm and (3±1)×10-30 face='roman'>cm6 face='roman'>s-1 at 520?nm.