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Tuning the g-factor of neutral and charged excitons confined to self-assembled (Al,Ga)As shell quantum dots

机译:调整限于自组装(Al,Ga)As壳量子点的中性和带电激子的g因子

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摘要

We study the neutral exciton (X) and charged exciton (CX) transitions from (Al,Ga)As shell quantum dots located in core-shell nanowires, in the presence of a magnetic field. The g-factors and the diamagnetic coefficients of both the X and the CX depend on the orientation of the field with respect to the nanowire axis. The aspect ratio of the X wavefunction is quantified based on the anisotropy of the diamagnetic coefficient. For specific orientations of the magnetic field, it is possible to cancel the g-factor of the bright states of the X and the CX by means of an inversion of the sign of the hole's g-factor, which is promising for quantum information processing applications.
机译:我们研究了在磁场存在下,位于核-壳纳米线中的(Al,Ga)As壳量子点的中性激子(X)和带电激子(CX)跃迁。 X和CX的g因子和抗磁系数取决于磁场相对于纳米线轴的方向。基于反磁性系数的各向异性来量化X波函数的纵横比。对于磁场的特定方向,可以通过反转空穴的g因子的符号来抵消X和CX亮态的g因子,这对于量子信息处理应用是有希望的。

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