Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping

摘要

Excitation cross section of erbium-doped GaN waveguides is measured to be approximately 2.2×10−21cm2 at 980 nm pumping wavelength. This cross section value is found relatively insensitive to the crystalline quality of epilayers. However, spontaneous emission carrier lifetimes in these waveguides are directly related to both the crystalline quality and the optical loss, and thus can be used as a material quality indicator.