首页> 外文期刊>Applied Physics Letters >Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene
【24h】

Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene

机译:多层石墨烯中反磁性边缘量子阱中捕获的多余电子引起的磁性

获取原文
获取原文并翻译 | 示例
           

摘要

In this paper, we clarified a robust mechanism of magnetism generated by excess electrons captured by edge-quantum well of diamagnetic armchair edges. Consistency between density functional theory calculations and electron cyclotron resonance experiments verified that: (1) Multi-layer armchair nanoribbons are stable with proper amounts of excess electrons which can provide net spin; (2) Since under-coordination induces lattice relaxation and potential well modulation, electrons tend to be trapped at edges; and (3) Neither large amount of excess electrons nor positive charges can induce magnetism. This work shed light on the development of graphene devices in its magnetic applications.
机译:在本文中,我们阐明了由抗磁性扶手椅边缘的边缘量子阱捕获的多余电子所产生的强磁性机制。密度泛函理论计算与电子回旋共振实验之间的一致性证明:(1)多层扶手椅纳米带稳定,适量的过量电子可提供净自旋; (2)由于配位不足会引起晶格弛豫和势阱调制,因此电子容易陷于边缘。 (3)大量的过量电子和正电荷都不会感应磁性。这项工作为石墨烯器件在其磁性应用中的发展提供了启示。

著录项

  • 来源
    《Applied Physics Letters》 |2014年第4期|1-4|共4页
  • 作者单位

    Institute of Nanosurface Science and Engineering, Shenzhen University, Shenzhen 518060, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号