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Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-plane current

机译:平面内电流引起的单个垂直磁化​​层的热辅助磁开关

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We report that by heating samples the critical current density for magnetization reversal (Jc) in a single perpendicularly magnetized layer can be decreased from 2.6 × 107 A/cm2 to about 1 × 106 A/cm2 for a temperature increase of 143 K. The nonlinear dependence of Jc on the perpendicular anisotropy field indicates that the coherent magnetic switching model cannot fully explain the current-induced perpendicular switching. By considering the current-induced domain nucleation and expansion during switching, we conclude that Jc also depends on current-induced domain behavior. Moreover, by reversing the heat flow direction, we demonstrate that the thermal related spin transfer torques have little influence on the thermally assisted magnetic switching.
机译:我们报告说,通过加热样品,单个垂直磁化​​层中用于磁化反转的临界电流密度(J c )可以从2.6×10 7 A / cm 2 到大约1×10 6 A / cm 2 ,温度增加143K。J c 表示相干磁开关模型不能完全解释电流感应的垂直开关。通过考虑开关过程中电流感应域的形核和扩展,我们得出结论,J c 也取决于电流感应域的行为。此外,通过反转热流方向,我们证明了与热有关的自旋传递转矩对热辅助磁开关的影响很小。

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